preliminary n otice: this is not a final specification. some parametric limits are subject to change. mar. 2001 mitsubishi fast recovery diode module RM400DY-66S high power switching use insulated type application 3-level inverters, 3-level converters, dc choppers. RM400DY-66S outline drawing & circuit diagram dimensions in mm i dc ................................................................ 400a v rrm ...................................................... 3300v insulated type 2-elements in a pack hvdi (high voltage diode) module (c) (c) (e) (e) k2 circuit diagram a2 k1 a1 label 4-m8 nuts c ee c g e c k1 k2 a1 a2 57 0.25 57 0.25 20 124 0.25 140 130 114 5 38 18 61.5 15 30 40 6- 7 mounting holes
preliminary n otice: this is not a final specification. some parametric limits are subject to change. mar. 2001 66 3300 3300 2200 mitsubishi fast recovery diode module RM400DY-66S high power switching use insulated type absolute maximum ratings (tj = 25 c) voltage class v rrm v rsm v r(dc) symbol repetitive peak reverse voltage non-repetitive peak reverse voltage reverse dc voltage item v v v unit a a a 2 s c c v n ?m n ?m kg i dc i fms i 2 t t j t stg v iso output dc current surge forward current i 2 t for fusing junction temperature storage temperature isolation voltage mounting torque mass t c =25 c 1 cycle of half wave 60hz, peak value, non-repetitive, t j = 25 c start, v rm = 0v value of one cycle surge current, t w = 8.3ms, t j = 25 c start charged part to base plate, rms, sinusoidal, ac 60hz 1min. main terminals screw m8 mounting screw m6 typical value 400 3200 4.27 ? 10 4 ?0 ~ +150 ?0 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 1.5 symbol item conditions unit ratings 3.50 100 0.036 ma v s c k/w k/w repetitive reverse current forward voltage reverse recovery time reverse recovery charge termal resistance contact thermal resistance i rrm v fm t rr q rr r th(j-c) r th(c-f) v rrm applied, v rm = v rrm i fm = 400a i fm = 400a, d if /d t = ?00a/ s, v r = 1650v junction to case (per 1/2 module) case to fin, conductive grease applied (per 1/2 module) min typ max symbol item conditions limits unit electrical characteristics (tj = 25 c) 3 4.55 1.20 0.072 hvdi (high voltage diode) module
preliminary n otice: this is not a final specification. some parametric limits are subject to change. mar. 2001 mitsubishi fast recovery diode module RM400DY-66S high power switching use insulated type hvdi (high voltage diode) module forward current ( a ) 0 300 200 100 1000 0 200 400 800 600 v cc = 1650v, di f /dt = 800a/ s t j = 25 c inductive load integrated over range of 10% 012345 10 2 7 5 3 10 3 7 5 3 2 forward current (a) forward voltage (v) maximum forward characteristic 3 2 t j = 25 c 10 2 10 3 10 2 10 1 10 0 7 5 3 2 10 1 7 5 3 2 10 0 10 1 7 5 3 2 23 57 23 57 23 57 time ( s ) single pulse t c = 25 c r th(j c) = 0.072k/ w z th(j c) ( c/ w) maximum transient thermal impedance ( junction to case ) q rr ( c) reverse recovery characteristics vs. forward current ( typical ) di/dt ( a/ s ) q rr ( c) reverse recovery characteristics vs. ?i/dt ( typical ) 0 500 1000 1500 2000 2500 0 100 200 300 400 500 v cc = 1650v i f = 400a performance curves
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